2MBI 150J-120

FUJI

2MBI 150J-120 é um módulo IGBT FUJIcomutação de alta velocidade.

Absolute Maximum Ratings of 2MBI150J-120 (Tj = 25ºC)

Items	Symbols	Ratings	Units
Collector-emitter voltage	Vces	1200	V
Gate-emitter voltage	Vges	+-20	V
Collector current continuous	Ic	150	A
Collector current 1ms	Ic Pulse	300	A
Collector current	-Ic	150	A
Collector current 1ms	-Ic Pulse	300	A
Max.power dissipation	PC	960	W
Operating temperature	Tj	+150	ºC
Storage temperature	Tstg	-40 ~ +125	ºC
Isolation voltage	Vis	AC 2500 (1min)	V
Screw torque	Mounting *1	3.5	N . m
Screw torque	Terminals *2	4.5	N . m

Note: *1 Recommendable Value: 2.5 ~ 3.5 N . m (M5) | *2 Recommendable Value: 3.5 ~ 4.5 N . m (M6)

Static Electrical Characteristics of 2MBI150J-120 (Tj = 25ºC)

Items	Symbols	Characteristics	Conditions	Units
Min.	Typ.	Max.
Zero gate voltagecollector current	Ices	–	–	2.0	TJ = 25ºCVge = 0VVce = 1200V	mA
Gate-emitter leakage current	Iges	–	–	30	Vce = 0VVge = +- 20V	μA
Gate-emitter threshold package	Vge (t.h)	–	5.0	–	Vce = 20VIc = 150mA	V
Collector-emitter saturation voltage	Vce (sat)	–	2.2	–	Vge = 15VIc = 150A	V

Dynamic Ratings of 2MBI150J-120 (Tj = 25ºC)

Items	Symbols	Characteristics	Conditions	Units
Min.	Typ.	Max.
Input capacitance	Cies	–	18000	–	Vge = 0VVce = 10Vf = 1 Mllz	pF
Output capacitance	Coes	–	–	–
Reverse transfer capacitance	Cres	–	–	–
Turn-on time	t on	–	0.85	–	Vcc = 600VIc = 150AVge = +-15VRg = 5.6Ω	μS
t r	–	0.30	–
Turn-off time	t off	–	1.05	–
t f	–	0.20	–

Characteristics of Reverse Diode of 2MBI150J-120 (Tj = 25ºC)

Reverse recovery time

t rr

–

350

IF = 150A-di/dt = 450A/μS

n s

Thermal Resistance Characteristics of 2MBI150J-120