- 11 2062 5010 / 48 3512 0278
- Atendimento: Segunda à sexta das 8h às 17h
BSM100GD120DN2 é um módulo IGBT Infineon.
Preliminary data– Solderable Power Module- 3-phase full-bridge- Including fast free-wheel diodes- Package with insulated metal base plate- Econopack 3
Maximum ratings
| Parameter | Symbol | Values | Unit |
| Collector-emitter voltage | VCE | 1200 | V |
| Collector-gate voltage RGE = 20 k? | VCGR | 1200 | |
| Gate-emitter voltage | VGE | ± 20 | |
| DC collector current TC = 25 °C TC = 80 °C | IC | 150 100 | A |
| Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C | ICpuls | 300 200 | |
| Power dissipation per IGBT TC = 25 °C | Ptot | 680 | W |
| Chip temperature | Tj | +150 | °C |
| Storage temperature | Tstg | -55 … + 150 | |
| Thermal resistance, chip case | RthJC | ≤ 0.182 | K/W |
| Diode thermal resistance, chip case | RthJCD | ≤ 0.36 | |
| Insulation test voltage, t = 1min. | Vis | 2500 | Vac |
| Creepage distance | – | 16 | mm |
| Clearance | – | 11 | |
| DIN humidity category, DIN 40 040 | – | F | – |
| IEC climatic category, DIN IEC 68-1 | – | 55 / 150 / 56 |
Electrical Characteristics (at Tj = 25ºC, unless otherwise specified)
| Static Characteristics | Symbol | Values | Unit | ||
| min. | typ. | max. | |||
| Gate threshold voltage VGE = VCE, IC = 4 mA | VGE(th) | 4,5 | 5,5 | 6,5 | V |
| Collector-emitter saturation voltage VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C | VCE(sat) | – – | 2.5 3.1 | 3 3.7 | |
| Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C | ICES | – – | 1.5 6 | 2 – | mA |
| Gate-emitter leakage current VGE = 20 V, VCE = 0 V | IGES | – | – | 400 | nA |
| AC Characteristics | Symbol | Values | Unit | ||
| min. | typ. | max. | |||
| Transconductance VCE = 20 V, IC = 100 A | gfs | 54 | – | – | S |
| Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz | Ciss | – | 6,5 | – | nF |
| Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz | Coss | – | 1 | – | |
| Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz | Crss | – | 0,5 | – |
| Switching Characteristics, inductive Load at Tj = 125ºC | Symbol | Values | Unit | ||
| min. | typ. | max. | |||
| Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 W | td(on) | – | 160 | 320 | ns |
| Rise time VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 W | tr | – | 80 | 160 | |
| Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 W | td(off) | – | 400 | 520 | |
| Fall time VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 W | tf | – | 70 | 100 |
| Free-Wheel Diode | Symbol | Values | Unit | ||
| min. | typ. | max. | |||
| Diode forward voltage IF = 100 A, VGE = 0 V, Tj = 25 °C IF = 100 A, VGE = 0 V, Tj = 125 °C | VF | – – | 2.3 1.8 | 2.8 – | V |
| Reverse recovery time IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C | trr | – | 0,3 | – | µs |
| Reverse recovery charge IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C | Qrr | – – | 4 11 | – – | µC |
– Weight: 300g- IGBT Power Module
Circuit Diagram
Dimensions in mm
