Atendimento: Segunda à sexta das 8h às 17h
2MBI 150J-120 é um módulo IGBT FUJIcomutação de alta velocidade.
Absolute Maximum Ratings of 2MBI150J-120 (Tj = 25ºC)
| Items | Symbols | Ratings | Units |
| Collector-emitter voltage | Vces | 1200 | V |
| Gate-emitter voltage | Vges | +-20 | V |
| Collector current continuous | Ic | 150 | A |
| Collector current 1ms | Ic Pulse | 300 | A |
| Collector current | -Ic | 150 | A |
| Collector current 1ms | -Ic Pulse | 300 | A |
| Max.power dissipation | PC | 960 | W |
| Operating temperature | Tj | +150 | ºC |
| Storage temperature | Tstg | -40 ~ +125 | ºC |
| Isolation voltage | Vis | AC 2500 (1min) | V |
| Screw torque | Mounting *1 | 3.5 | N . m |
| Screw torque | Terminals *2 | 4.5 | N . m |
Note: *1 Recommendable Value: 2.5 ~ 3.5 N . m (M5) | *2 Recommendable Value: 3.5 ~ 4.5 N . m (M6)
Static Electrical Characteristics of 2MBI150J-120 (Tj = 25ºC)
| Items | Symbols | Characteristics | Conditions | Units | ||
| Min. | Typ. | Max. | ||||
|
Zero gate voltagecollector current |
Ices | – | – | 2.0 |
TJ = 25ºCVge = 0VVce = 1200V |
mA |
| Gate-emitter leakage current | Iges | – | – | 30 |
Vce = 0VVge = +- 20V |
μA |
| Gate-emitter threshold package | Vge (t.h) | – | 5.0 | – |
Vce = 20VIc = 150mA |
V |
| Collector-emitter saturation voltage | Vce (sat) | – | 2.2 | – |
Vge = 15VIc = 150A |
V |
Dynamic Ratings of 2MBI150J-120 (Tj = 25ºC)
| Items | Symbols | Characteristics | Conditions | Units | ||
| Min. | Typ. | Max. | ||||
| Input capacitance | Cies | – | 18000 | – | Vge = 0VVce = 10Vf = 1 Mllz | pF |
| Output capacitance | Coes | – | – | – | ||
| Reverse transfer capacitance | Cres | – | – | – | ||
| Turn-on time | t on | – | 0.85 | – | Vcc = 600VIc = 150AVge = +-15VRg = 5.6Ω | μS |
| t r | – | 0.30 | – | |||
| Turn-off time | t off | – | 1.05 | – | ||
| t f | – | 0.20 | – |
Characteristics of Reverse Diode of 2MBI150J-120 (Tj = 25ºC)
| Items | Symbols | Characteristics | Conditions | Units | ||
| Min. | Typ. | Max. | ||||
| Diode forward on-voltage | VF | – | 2.5 | – | IF = 150AVge = 0V | V |
| Reverse recovery time | t rr | – | – | 350 | IF = 150A-di/dt = 450A/μS | n s |
Thermal Resistance Characteristics of 2MBI150J-120
| Items | Symbols | Characteristics | Conditions | Units | ||
| Min. | Typ. | Max. | ||||
| Thermal resistance | Rth (j-c) | – | – | 0.130 | IGBT (MBT) | ºC/W |
| Rth (j-c) | – | – | 0.250 | Diode | ||
| Rth (c-f) | – | 0.025 | – | the base to cooling fin |
